barrier voltage

英 [ˈbæriə(r) ˈvəʊltɪdʒ] 美 [ˈbæriər ˈvoʊltɪdʒ]

网络  隔离电压; 势垒电压

电力



双语例句

  1. Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin.
    使用肖特基二极管D1和D2,而不是普通二极管,为的是减少总线上低状态电压,改进噪声极限。
  2. Based on the model, the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed.
    在该模型的基础上,讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化。
  3. And with the use of dielectric barrier discharge, breakdown voltage is increased largely by the increase of heat transfer rate, which is helpful to avoid breakdown in application.
    采用介质阻挡放电在提高空气-金属之间传热速率的同时,放电间隙击穿电压发生显著提高,也使放电在实际应用中更易于控制。
  4. The effective barrier changes with increasing applied voltage, and there is a step in the current of barrier vs voltage.
    研究了场发射的有效势垒随外加电场的变化,发现在有效势垒随外电场变化的曲线中存在一段平台。
  5. The characters of waste water treatments using dielectric barrier discharge, pulsed high direct voltage discharge and contact glow-discharge cold plasma are analyzed.
    分析了无声放电法、高压脉冲直流放电法和接触辉光放电法低温等离子体直接处理废水技术的特点。
  6. Through circuit resonance, dielectric barrier discharge power supply outputs a high frequency and high voltage of sine waveform to produce dielectric barrier discharge. Through DC input voltage regulation and circuit resonant frequency tracing, approximate linear load power regulation can be realized by the power supply.
    利用电路谐振产生高频高幅值的正弦波电压的介质阻挡放电电源,通过调整电源的逆变电路的直流输入电压,同时逆变电路开关频率跟踪电路谐振频率,可以实现介质阻挡放电负载功率的近似线性调整。
  7. Interference method is introduced to analyze the process of electron tunneling potential barrier. With this method, the relation between the applied voltage, oxide thickness, barrier height and effective electron mass can be obtained very conveniently.
    利用波的干涉方法来处理电子隧穿势垒的过程,方便地获得了出现极值时外加电压和栅氧化层厚度、势垒高度、电子的有效质量之间的关系。
  8. At reverse bias, the effective barrier height alters due to the presence of interface layer and states and changes with variation of voltage;
    反向偏置时,有效势垒高度因界面层及界面态的存在而有所改变,并且随外加电压而变化;
  9. The Barrier Voltage Measurement of SnO_2 Varistor
    SnO2压敏材料势垒电压的测量
  10. The effect of barrier width, doping in channel, and gate voltage on the electron gas concentration is investigated, and the controllability of gate voltage is emphasized.
    研究了势垒层组分比、势垒层宽度、沟道层掺杂和栅电压变化对二维电子气特性的影响。
  11. Removal of chlorobenzene and toluene by dielectric barrier discharge ( DBD) of ambipolar pulse high voltage
    双极性脉冲高压介质阻挡放电降解氯苯和甲苯
  12. The property variations of the dielectric barrier discharge as the changes of electrode conductivity ( between 2.8~ 10 000 μ S/ cm) was studied. It is found that the breakdown voltage is changed with the electrode conductivity.
    实验测量了不同电导率下(电导率在2.8~10000μS/cm范围内)的介质阻挡放电特性的变化规律,经分析发现:放电的击穿电压随电极电导率的变化而改变。
  13. This paper presents a capacitance method which is based on that the resistivity of the material with uniform doping has an one-to one correspondence relation to the barrier capacitance when a junction at fixed biasing voltage is formed.
    本文介绍一种基于固定偏压下,均匀掺杂材料的电阻率与其形成结时的势垒电容相对应的电容测量法。
  14. The experiment was carried out using a dielectric barrier discharge ( DBD) reactor driven by alternative current ( AC) voltage power to remove benzene in air.
    本研究首先用交流高压电驱动的介质阻挡放电(DBD,dielectricbarrierdischarge)来产生等离子体放电分解模拟空气中苯。
  15. Measurement of the barrier height at grain boundaries reveal that the decrease of the SnO_2 grain size with increasing Ag_2O concentration from 0 to 1.00mol% was the reason for raising the breakdown voltage and lowering the dielectric constant.
    晶界势垒高度测量揭示,SnO2的晶粒尺寸的迅速减小是击穿电压急剧增高和介电常数迅速减小的主要原因。
  16. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. It has the advantages of low turn-on voltage and high response frequency, compared with PN junction diodes.
    肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件,与普通的PN结二极管相比,它具有正向导通电压低,响应速度快等优良特性。
  17. Compared with common multi-layer film of metal, the Magnetic Tunnel Junction structure formed of the ferromagnetic layer/ insulating barrier/ the ferromagnetic layer have the characteristic of the high hinder, low consumption, high output voltage, which has the extensive application prospect.
    与通常的金属多层膜相比,铁磁层/绝缘层/铁磁层结构的磁性隧道结结构具有高内阻、低功耗、输出电压高的特点,其具有广泛的应用前景。
  18. The elevation of the schottky barrier height after annealing causes the reduction of gate leakage and the more depletion of channel electrons, which also leads to the change of the saturation current and the threshold voltage.
    退火后肖特基势垒高度提高,在减小栅泄漏电流的同时对沟道电子也有耗尽作用,这是饱和电流和阈值电压变化的主要原因。
  19. With the charge-voltage figure many key parameters may be obtained for studies on the applications of dielectric barrier discharge ( DBD) plasma, such as the discharge energy, gap capacitance, dielectric capacitance, cut-in voltage, gap voltage, and discharge gap electric field.
    在DBD应用研究中,使用电荷电压法能够测量许多重要参量,如放电功率、放电间隙等效电容、电介质层等效电容、着火电压、放电间隙等效电压及放电间隙电场强度等。
  20. However, considering the permittivity of ferroelectric barrier depending on the electric field, the applied bias voltage could have a strong influence on the properties of tunnel junction, which partly agrees with the experimental results.
    当考虑铁电薄膜的介电常数随电场变化的情况时,读取偏压对隧道结的遂穿特性有较大的影响,这一结论与实验结果在一定程度上相吻合。
  21. The effects of several parameters on the homogeneous dielectric barrier discharge at atmospheric pressure are explored. These parameters are the amplitude and frequency of the applied voltage, the thickness of dielectric plate, and the permittivity of dielectric.
    对外加电压幅值、频率、介质板厚度以及介电常数等参数对均匀大气压介质阻挡放电特性的影响作了系统的研究。
  22. Schottky barrier diode as a majority carrier device with high switching speed has been widely used in power circuit. But, in order to achieve high breakdown voltage, the concentrate of the drift region need to be lower enough, and the specific on-resistance improved a lot.
    肖特基势垒二极管作为一种多子器件具有很高的开关速度,但是要做到耐压很高就需要降低漂移区载流子的浓度,从而使正向导通电阻很大。
  23. The decay of the localized field near Ag nanoparticles under laser makes electrons easier to cross the barrier between the particles, which weakens the influence of Coulomb blockade and decreases the threshold voltage.
    在光照作用下Ag纳米粒子的局域场衰减使得电子更容易越过颗粒间的势垒,减弱库仑阻塞的影响,导致阈值电压的下降。
  24. These methods use barrier section as the unit of analysis and voltage scaling, which avoid the impact of barrier on program execution and energy consumptions caused by load imbalance due to barrier.
    该方法将同步段作为分析和电压调整单位,有效避免了障碍同步引起的负载不平衡对程序执行和功耗的影响。
  25. Both double needles and multiple needles electrode configurations nanosecond pulsed dielectric barrier discharge are investigated. It is found that plasma volume increase with the rising of the pulse peak voltage but keep almost content as increasing of pulse repetition rate.
    研究表明双针-板电极结构纳秒脉冲介质阻挡放电的放电体积随脉冲峰值电压的升高而增大,但随脉冲重复频率的升高基本保持不变。